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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3798 DESCRIPTION *Collector-Base Breakdown Voltage: V(BR)CBO= 800V(Min.) *Low Collector Saturation Voltage *High Speed Switching * APPLICATIONS *Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO IC Emitter-Base Voltage w w scs .i w 800 V 800 V 500 V 8 V 5 A 10 A 3 A .cn mi e Collector Current-Continuous ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @Ta=25 3 W PC Collector Power Dissipation @TC=25 Tj Junction Temperature 70 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3798 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; L= 25mH 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V A A Collector Cutoff Current VCB= 800V; IE= 0 VEB= 5V; IC= 0 100 Emitter Cutoff Current 100 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product Switching Times ton ts tf Turn-on Time Storage Time ww w scs .i IC= 3A; VCE= 5V IC= 0.5A; VCE= 10V; f= 1MHz .cn mi e 15 8 8 MHz 1.0 s s s IC= 3A; IB1= -IB2= 0.6A; VCC= 200V 3.0 Fall Time 1.0 isc Websitewww.iscsemi.cn |
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